? semiconductor components industries, llc, 2013 may, 2013 ? rev. 6 1 publication order number: n tf2955/d ntf2955, nvf2955, nvf2955p power mosfet ? 60 v, ? 2.6 a, single p ? channel sot ? 223 features ? design for low r ds(on) ? withstands high energy in avalanche and commutation modes ? aec ? q101 qualified ? nvf2955, nvf2955p ? these devices are pb ? free and are rohs compliant applications ? power supplies ? pwm motor control ? converters ? power management maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain ? to ? source voltage v dss ? 60 v gate ? to ? source voltage v gs 20 v continuous drain current (note 1) steady state t a = 25 c i d ? 2.6 a t a = 85 c ? 2.0 power dissipation (note 1) steady state t a = 25 c p d 2.3 w continuous drain current (note 2) steady state t a = 25 c i d ? 1.7 a t a = 85 c ? 1.3 power dissipation (note 2) t a = 25 c p d 1.0 w pulsed drain current tp = 10 s i dm ? 17 a operating junction and storage temperature t j , t stg ? 55 to 175 c single pulse drain ? to ? source avalanche energy (v dd = 25 v, v g = 10 v, i pk = 6.7 a, l = 10 mh, r g = 25 ) eas 225 mj lead temperature for soldering purposes (1/8? from case for 10 seconds) t l 260 c thermal resistance ratings parameter symbol max unit junction ? to ? tab (drain) ? steady state (note 2) r jc 14 c/w junction ? to ? ambient ? steady state (note 1) r ja 65 junction ? to ? ambient ? steady state (note 2) r ja 150 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. when surface mounted to an fr4 board using 1 in. pad size (cu. area = 1.127 in 2 [1 oz] including traces) 2. when surface mounted to an fr4 board using the minimum recommended pad size (cu. area = 0.341 in 2 ) http://onsemi.com d s g p ? channel ? 60 v 145 m @ ? 10 v r ds(on) typ ? 2.6 a i d max v (br)dss 1 2 3 4 sot ? 223 case 318e style 3 marking diagrams and pin assignment 3 source 2 drain 1 gate 4 drain device package shipping ? ordering information NTF2955T1G sot ? 223 (pb ? free) 1000 /tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. ayw 2955 a = assembly location y = year w = work week = pb ? free package (note: microdot may be in either location) 3 source 2 drain 1 gate 4 drain ayw 2955p nvf2955t1g sot ? 223 (pb ? free) 1000/ tape & reel nvf2955pt1g sot ? 223 (pb ? free) 1000/ tape & reel
ntf2955, nvf2955, nvf2955p http://onsemi.com 2 electrical characteristics (t j =25 c unless otherwise stated) parameter symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = ? 250 a ? 60 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j 66.4 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = ? 60 v t j = 25 c ? 1.0 a t j = 125 c ? 50 gate ? to ? source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v gs = v ds , i d = ? 1.0 ma ? 2.0 ? 4.0 v drain ? to ? source on resistance r ds(on) v gs = ? 10 v, i d = ? 0.75 a 145 170 m v gs = ? 10 v, i d = ? 1.5 a 150 180 v gs = ? 10 v, i d = ? 2.4 a 154 185 forward transconductance g fs v gs = ? 15 v, i d = ? 0.75 a 1.77 s charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 25 v 492 pf output capacitance c oss 165 reverse transfer capacitance c rss 50 total gate charge q g(tot) v gs = 10 v, v ds = 30 v, i d = 1.5 a 14.3 nc threshold gate charge q g(th) 1.2 gate ? to ? source charge q gs 2.3 gate ? to ? drain charge q gd 5.2 switching characteristics (note 4) turn ? on delay time t d(on) v gs = 10 v, v dd = 25 v, i d = 1.5 a, r g = 9.1 r l = 25 11 ns rise time t r 7.6 turn ? off delay time t d(off) 65 fall time t f 38 drain ? source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 1.5 a t j = 25 c ? 1.10 ? 1.30 v t j = 125 c ? 0.9 reverse recovery time t rr v gs = 0 v, di s /dt = 100 a/ s, i s = 1.5 a 36 ns charge time t a 20 discharge time t b 16 reverse recovery charge q rr 0.139 nc 3. pulse test: pulse width 300 s, duty cycle 2%. 4. switching characteristics are independent of operating junction temperatures.
ntf2955, nvf2955, nvf2955p http://onsemi.com 3 typical performance curves (t j = 25 c unless otherwise noted) 0 10 2 4 6 8 figure 1. on ? region characteristics figure 2. transfer characteristics figure 3. on ? resistance versus drain current and temperature figure 4. on ? resistance versus drain current and gate voltage figure 5. on ? resistance variation with temperature figure 6. drain ? to ? source leakage current versus voltage ? v gs, gate ? to ? source voltage (volts) ? i d, drain current (amps) t j = 25 c t j = 125 c t j = ? 55 c 0 0.4 0.3 0.2 0 10 6 ? i d, drain current (amps) r ds(on), drain ? to ? source resistance ( ) ? i d, drain current (amps) r ds(on), drain ? to ? source resistance ( ) v gs = ? 15 v 1.8 1.6 1.4 t j , junction temperature ( c) r ds(on), drain ? to ? source resistance (normalized) ? 50 50 25 0 ? 25 75 125 100 i d = ? 1.5 a v gs = ? 10 v 0.8 0 150 10 1000 ? v ds, drain ? to ? source voltage (volts) ? i dss , leakage (na) 54060 30 20 10 50 100 8 2 0 2 10 2 1 ? v ds, drain ? to ? source voltage (volts) ? i d, drain current (amps) 0 10 v gs = ? 10 v v gs = ? 3.8 v v gs = ? 4.5 v v gs = ? 5 v 6 210 8 46 0.1 1.2 4 0 0.25 0.2 0.175 0.15 0.125 0.05 10 8 6 0.1 0.075 2 1 v gs = ? 10 v to ? 7 v t j = 150 c t j = 25 c t j = 25 c t j = 125 c t j = ? 55 c v ds 10 v v gs = 0 v 8 3 44 t j = 125 c 0.225 2 v gs = ? 6 v v gs = ? 10 v 0.2 0.4 0.6 45 35 25 15 55 456789 v gs = ? 5.5 v t j = 25 c
ntf2955, nvf2955, nvf2955p http://onsemi.com 4 typical performance curves (t j = 25 c unless otherwise noted) 10 10 15 5 020 525 r ds(on) limit ? v gs 100 1 0.01 1000 10 1 12 4 2 0 100 50 0 5 0 1000 800 gate ? to ? source or drain ? to ? source voltage (volts) c, capacitance (pf) 600 400 q g , total gate charge (nc) figure 7. capacitance variation figure 8. gate ? to ? source and drain ? to ? source voltage versus total charge v gs , gate ? to ? source voltage (volts) figure 9. resistive switching time variation versus gate resistance r g , gate resistance ( ) figure 10. diode forward voltage versus current ? v sd , source ? to ? drain voltage (volts) ? i s , source current (amps) t, time (ns) figure 11. maximum rated forward biased safe operating area ? v ds , drain ? to ? source voltage (volts) figure 12. maximum avalanche energy versus starting junction temperature t j , starting junction temperature ( c) ? i d , drain current (amps) e as , single pulse drain ? to ? source avalanche energy (mj) 010 8 416 1 10 100 0 0.5 0.25 0.1 10 100 1 25 125 150 100 75 175 50 i d = ? 1.5 a t j = 25 c v gs v gs = 0 v v ds = 0 v t j = 25 c c rss c iss c oss c rss 1 0.75 1 c iss v gs = ? 20 v single pulse t c = 25 c v dd = ? 25 v i d = ? 1.5 a v gs = ? 10 v v gs = 0 v t j = 25 c i pk = ? 6.7 a 1 ms 100 s 10 ms dc t r t d(off) t d(on) ? v ds 1.75 150 200 250 q gd q t 0 6 2 t f thermal limit package limit 200 1200 6 10 8 10 2 1.25 1.5 100 3 4 10 s 14 12 60 20 10 0 30 40 50 v ds , drain ? to ? source voltage (volts) q gs v ds 0.1
ntf2955, nvf2955, nvf2955p http://onsemi.com 5 package dimensions sot ? 223 (to ? 261) case 318e ? 04 issue n a1 b1 d e b e e1 4 123 0.08 (0003) a l1 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inch. 1.5 0.059 mm inches scale 6:1 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.3 0.091 2.0 0.079 soldering footprint* h e dim a min nom max min millimeters 1.50 1.63 1.75 0.060 inches a1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 d 6.30 6.50 6.70 0.249 e 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 nom max l1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 h e ? ? e1 0 1 0 0 1 0 l l 0.20 ??? ??? 0.008 ??? ??? style 3: pin 1. gate 2. drain 3. source 4. drain *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ntf2955/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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